9/16/2023 0 Comments Pmos cmos nmos![]() ![]() ![]() 150000004706 metal oxides Chemical class 0.000 description 8.229910044991 metal oxide Inorganic materials 0.000 description 8.QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8.PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8 PNEYBMLMFCGWSK-UHFFFAOYSA-N al2o3 Chemical compound.238000009279 wet oxidation reaction Methods 0.000 description 14.230000015572 biosynthetic process Effects 0.000 description 20.229920002120 photoresistant polymer Polymers 0.000 description 30. ![]() 239000004065 semiconductor Substances 0.000 abstract description 32.QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 2.YENWHDHPCQNHJJ-UHFFFAOYSA-N 0.000 claims 2 YENWHDHPCQNHJJ-UHFFFAOYSA-N aluminum oxygen(2-) Chemical group.229910001929 titanium oxide Inorganic materials 0.000 claims description 8.GWEVSGVZZGPLCZ-UHFFFAOYSA-N titan oxide Chemical group O=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8.OGIDPMRJRNCKJF-UHFFFAOYSA-N TiO Inorganic materials =O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 8.HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N1234N562N351N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 24.235000012239 silicon dioxide Nutrition 0.000 claims description 48.239000000377 silicon dioxide Substances 0.000 claims description 50.229910052757 nitrogen Inorganic materials 0.000 claims description 54.VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 100.IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 106.239000000203 mixture Substances 0.000 claims abstract description 18.239000000758 substrate Substances 0.000 claims abstract description 124.Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Priority claimed from US96962497A external-priority Priority claimed from US08/810,682 external-priority patent/US5763922A/en Application filed by Intel Corp filed Critical Intel Corp Priority to US09/568,858 priority Critical patent/US6538278B1/en Application granted granted Critical Publication of US6538278B1 publication Critical patent/US6538278B1/en Anticipated expiration legal-status Critical Status Expired - Lifetime legal-status Critical Current Links Original Assignee Intel Corp Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) Chau Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Expired - Lifetime Application number US09/568,858 Inventor Robert S. Google Patents CMOS integrated circuit having PMOS and NMOS devices with different gate dielectric layersÄownload PDF Info Publication number US6538278B1 US6538278B1 US09/568,858 US56885800A US6538278B1 US 6538278 B1 US6538278 B1 US 6538278B1 US 56885800 A US56885800 A US 56885800A US 6538278 B1 US6538278 B1 US 6538278B1 Authority US United States Prior art keywords dielectric layer gate dielectric gate integrated circuit type conductivity Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google Patents US6538278B1 - CMOS integrated circuit having PMOS and NMOS devices with different gate dielectric layers US6538278B1 - CMOS integrated circuit having PMOS and NMOS devices with different gate dielectric layers ![]()
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